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Insulated Gate Bipolar Transistors
Insulated Gate Bipolar Transistors
STMicroelectronics India offers insulated gate bipolar transistors (IGBTs).
Product & Technology News
- Optimised for best conduction and switching performance in
soft-switching circuits, STMicroelectronics’ STGWA40IH65DF and
STGWA50IH65DF 650V STPOWER IGBTs increase the energy efficiency of
resonant converters in the 16kHz-60kHz switching-frequency range.
- Extending ST’s trench field-stop (TFS) IGBTs for soft-switching
applications, which also include the HB and HB2 series for power supplies,
welders, and solar converters, the new IH-series devices are fine-tuned
for the half-bridge circuits of appliances such as induction cookers and
other soft-switching applications. Product designers can now choose these
IGBTs to target superior energy ratings.
- Rated for 40A and 50A respectively, the STGWA40IH65DF and
STGWA50IH65DF serve applications up to 4kW. With low saturation voltage
(VCE(sat)) of 1.5V (typical at nominal current) and a low-drop voltage
freewheeling co-packaged diode, these advanced IGBTs combine outstanding
conduction performance with low turn-off losses of just 0.19mJ (typical)
in the 40A STGWA40IH65DF.
- IH-series IGBTs are specified up to the maximum junction
temperature of 175°C, and feature low thermal resistance and a positive
temperature coefficient of VCE(sat) for enhanced reliability.
- The STGWA40IH65DF and STGWA50IH65DF IGBTs are available now in
the TO-247 long-lead power package. ST will add 20A and 30A variants soon,
in TO-247 long lead and TO-220 packages.