• Arraycom (India) Limited

Power Semiconductor Devices

Arraycom (India) Ltd commenced manufacture of Power Semiconductor Devices in the year 2011, to accommodate to the growing necessities of power electronic systems and controls in India. These consist of Thyristors, diodes, power modules, water cooled assembly, MJE series, IGBT (insulated gate bipolar transistors), GTO (gate turn off thyristor) have earned a reputation for high reliability and quality and are also exported to other countries. Arraycom rectifier diodes are particularly suitable for IGBT inverter front-end rectifiers, very high current applications like aluminium smelting and trackside rectification, from 500 A to 3000 A, 4000 V. Thyristors feature the latest technology, which produces noticeable reductions in conduction losses which, combined with reduced thermal resistance, gives substantially more power handling capability. The current range extends from 25 A to 400 A, 1600 V. The range includes various type of power semiconductor devices like: diodes, thyristor, rectifier diode in stud, rectifier diode in capsule, diode - special, thyristor in stud, thyristor in capsule (DCR), GTO (gate turn off thyristor); and other power transistors - medium power transistors, MJE series (for CFL) transistors; IGBT (insulated fate bipolar transistors); power modules; welding modules; bridge rectifier; generator diodes; and water cooled assembly.