• Luminious Sales International

IGBT In Isolated Module Form

Luminious Sales International has introduced Insulated Gate Bipolar Transistor (IGBT) in isolated module form. The IGBT is a combination of Bipolar and MOS technologies. This type of switching device has low saturation voltage characteristics, high voltage and current switching capabilities of bipolar transistor, while high speed switching characteristics and voltage driven function of the power MOSFETs. The LSII 50 PB IGBT Module permits much higher switching speeds and much lower collector to emitter saturation voltages than ordinary bipolar Darlington transistors. The LSII 50 PB module has collector current capacity of 50 Amps with collector-emitter voltage up to 1,200 V. Each IGBT chip in the module is incorporated with ultra fast recovery epitaxial diode (FRED) with very low reverse recovery charge. These same diodes are also available as separate elements for use in IGBT circuits or any other applications requiring high diode switching speed. The LSII 50 PB IGBT Module uses direct copper bonded (DCB) substrates which consist of an aluminium oxide insulator to which copper is directly bonded which gives improved thermal properties. These IGBT modules are suitable for applications in power electronics, especially in pulse width modulated servo and three-phase drives requiring high dynamic power range control and low noise. They can also be used for UPS, SMPS and other power circuits requiring high switching repetition rates. The IGBTs improve dynamic performance and efficiency. They also reduce the volume of audible noise levels.