• Silicon Power Electronics

POWER TRANSISTORS IN TO-3 & TO-3P PACKAGES

Silicon Power Electronics offers Power Transistors. It is offered in TO-3 and TO-3P packages. Multiepitaxial planar technology is used for manufacturing medium voltage, rugged, high switching speed transistors for IC up to 70 A. It consists of epitaxial layers of N type silicon. The base is obtained by planer diffusion inside the epitaxial collector. It is ideal for applications with VEO up to 450 V at high switching speed. Applications include high power DC-DC converter and motor control. Multiepitaxial mesa is used for manufacturing high voltage and fast switching NPN transistors with VCES up to 500 V. The base is made in two parts: first - epitaxial base is grown as epibase technology, and second -masked diffusion, and as a result two different base regions are created. Application for this high voltage and rugged transistors include off-line switching power supplies, lamp ballast, CTV deflection and motor control. The other products offered are diodes, thyristor, bridge rectifiers, power zener diodes (3, 10, 20 and 50 W). BUX 98 is multiepitaxial mesa NPN transistor with high current, high voltage and fast switching speed specially used in high frequency and huh efficiency converters and linear and switching industrial equipment. Specifications - power dissipation of 150 W at 25°C, VCBO = 850V, VCEO (IB=0) = 400V and collector current 30A. BUX 48 is multiepitaxial mesa NPN transistor with high current, high voltage and fast switching speed specially used in switch mode power supplies and low power converters. Power dissipation is 175 W at 25°C, VCBO = 850V, VCEO = 400V and collector current 15 A. 2N3058 is a silicon multiepitaxial planer NPN transistor used for high current and switching equipment. Power dissipation is 140 W at 25°C. VCBO = 150V (IE = 0), hFE (max) = 100-250, VCEO = 90V(IB=0) and collector current 20 A.