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High Frequency Insulated Gate Bipolar Transistors
High Frequency Insulated Gate Bipolar Transistors
STMicroelectronics has launched 650V high-frequency insulated-gate bipolar transistors (IGBTs) under HB2 650V IGBT series.
- HB2 650V IGBT series delivers efficiency and performance gains for medium- and high-speed applications such as PFC converters, welders, uninterruptible power supplies (UPS), and solar inverters, leveraging ST’s latest Trench Field Stop (TFS) technology. The series also includes automotive-eligible devices meeting AEC-Q101 Rev. D.
- Joining the STPOWER portfolio, the new HB2 series has outstanding conduction performance thanks to low VCEsat of 1.55V. At the same time, dynamic behavior is enhanced due to reduced gate charge that enables fast switching at low gate current. Outstanding thermal performance helps maximize reliability and power density, while the new products are also positioned as a very competitive choice in the market.
- The HB2 series IGBTs can be specified with either a full-rated or half-rated diode, or a protection diode to prevent accidental reverse bias, giving extra freedom to optimize the behavior for specific application needs.
- The first of the new 650V devices, the 40A STGWA40HP65FB2, is available now in the TO-247 long-lead package, priced from $2.95 for orders of 1000 pieces.
High Frequency Insulated Gate Bipolar Transistors
IPF High Frequency Insulated Gate Bipolar Transistors
High Frequency Insulated
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